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APTMC120HR11CT3AG APTMC120HR11CT3AG C rev 0 july, 2015 www.microsemi.com 1-11 all ratings @ t j = 25c unless otherwise specified these devices are sensitive to electrostatic discharg e. proper handling procedur es should be followed. see application note apt0502 on www.microsemi.com all multiple inputs and outputs must be shorted together 10/11 ; 23/24 ; 2/3 ; sic mosfet (q1, q2): v ces = 1200v ; r dson = 98m max @ tj = 25c trench & field stop igbt3 (q3, q4): v ces = 600v ; i c = 20a @ tc = 100c application ? solar converter ? uninterruptible power supplies features ? q1, q2 sic power mosfet - low r ds(on) - high temperature perf ormance ? q3, q4 trench + field stop igbt3 - low voltage drop - low tail current - switching frequency up to 20 khz ? sic schottky diode (cr1 to cr4) - zero reverse recovery - zero forward recovery - temperature independent switching behavior - positive temperature coefficient on vf ? kelvin emitter for easy drive ? very low stray inductance ? aln substrate for improved thermal performance ? internal thermistor for temperature monitoring benefits ? stable temperature behavior ? very rugged ? solderable terminals for easy pcb mounting ? direct mounting to heatsink (isolated package) ? low junction to case thermal resistance ? low profile ? rohs com p liant phase leg & dual common emitter power module downloaded from: http:///
APTMC120HR11CT3AG APTMC120HR11CT3AG C rev 0 july, 2015 www.microsemi.com 2-11 1. sic mosfet characteristics (per mosfet) absolute maximum ratings electrical characteristics symbol characteristic test conditions min typ max unit i dss zero gate voltage drain current v gs = 0v , v ds = 1200v 100 a r ds(on) drain C source on resistance v gs = 20v i d = 20a t j = 25c 80 98 m t j = 150c 153 v gs ( th ) gate threshold voltage v gs = v ds , i d = 5ma 2.4 3 v i gss gate C source leakage current v gs = 20 v, v ds = 0v 250 na dynamic characteristics symbol characteristic test conditions min typ max unit c iss input capacitance v gs = 0v v ds = 1000v f = 1mhz 950 pf c oss output capacitance 80 c rss reverse transfer capacitance 7.6 q g total gate charge v ge = 20v v bus = 800v i d = 20a 62 nc q gs gate C source charge 15 q g d gate C drain charge 23 t d(on) turn-on delay time v gs = -2/+20v v bus = 800v i d = 20a r l = 40 ? ; r g = 50 12 ns t r rise time 14 t d(off) turn-off delay time 23 t f fall time 18 e on turn on energy inductive switching v gs = -5/+20v v bus = 600v i d = 20a r g = 50 t j = 150c 0.45 mj e off turn off energy t j = 150c 0.25 r thjc junction to case thermal resistance 1 c/w symbol parameter max ratings unit v dss drain - source voltage 1200 v i d continuous drain current t c = 25c 26 a t c = 80c 20 i dm pulsed drain current 55 v gs gate - source voltage -10/+25 v r dson drain - source on resistance 98 m p d power dissipation t c = 25c 125 w downloaded from: http:///
APTMC120HR11CT3AG APTMC120HR11CT3AG C rev 0 july, 2015 www.microsemi.com 3-11 sic diode ratings and characteri stics (cr1 & cr2) (per diode) symbol characteristic test conditions min typ max unit v rrm peak repetitive reverse voltage 1200 v i rm reverse leakage current v r = 1200v t j = 25c 10 200 a t j = 175c 500 i f dc forward current tc = 100c 10 a v f diode forward voltage i f = 10a t j = 25c 1.5 1.8 v t j = 175c 2.3 q c total capacitive charge i f = 10a, v r = 600v di/dt = 500a/s 120 nc c total capacitance f = 1mhz, v r = 200v 115 pf f = 1mhz, v r = 400v 85 r thjc junction to case thermal resistance 1.1 c/w 2. trench & field stop igbt3 (per igbt) absolute maximum ratings symbol parameter max ratings unit v ces collector - emitter voltage 600 v i c continuous collector current t c = 25c 37 a t c = 100c 20 i cm pulsed collector current t c = 25c 40 v ge gate C emitter voltage 20 v p d power dissipation t c = 25c 78 w rbsoa reverse bias safe operating area t j = 150c 40a @ 550v electrical characteristics symbol characteristic test conditions min typ max unit i ces zero gate voltage collector current v ge = 0v, v ce = 600v 250 a v ce(sat) collector emitter saturation voltage v ge =15v i c = 20a t j = 25c 1.5 1.9 v t j = 150c 1.7 v ge ( th ) gate threshold voltage v ge = v ce , i c = 300a 5.0 5.8 6.5 v i ges gate C emitter leakage current v ge = 20v, v ce = 0v 300 na downloaded from: http:///
APTMC120HR11CT3AG APTMC120HR11CT3AG C rev 0 july, 2015 www.microsemi.com 4-11 dynamic characteristics symbol characteristic test conditions min typ max unit c ies input capacitance v ge = 0v v ce = 25v f = 1mhz 1100 pf c oes output capacitance 70 c res reverse transfer capacitance 35 q g gate charge v ge = 15v, i c = 20a v ce = 300v 200 nc t d(on) turn-on delay time inductive switching (25c) v ge = 15v v bus = 300v i c = 20a r g = 12 110 ns t r rise time 45 t d(off) turn-off delay time 200 t f fall time 40 t d(on) turn-on delay time inductive switching (150c) v ge = 15v v bus = 300v i c = 20a r g = 12 120 ns t r rise time 50 t d(off) turn-off delay time 250 t f fall time 60 e on turn-on switching energy v ge = 15v v bus = 300v i c = 20a r g = 12 t j = 25c 0.11 mj t j = 150c 0.2 e off turn-off switching energy t j = 25c 0.5 mj t j = 150c 0.7 i sc short circuit data v ge 15v ; v bus = 360v t p 10s ; t j = 150c 100 a r thjc junction to case thermal resistance 1.92 c/w 3. sic diode ratings and characteristics (cr3 & cr4) (per diode) symbol characteristic test conditions min typ max unit v rrm peak repetitive reverse voltage 600 v i rm reverse leakage current v r = 600v t j = 25c 10 60 a t j = 175c 20 300 i f dc forward current tc = 100c 10 a v f diode forward voltage i f = 10a t j = 25c 1.6 1.8 v t j = 175c 2 2.4 q c total capacitive charge i f = 10a, v r = 600v di/dt = 500a/s 28 nc c total capacitance f = 1mhz, v r = 200v 65 pf f = 1mhz, v r = 400v 50 r thjc junction to case thermal resistance 2.2 c/w downloaded from: http:///
APTMC120HR11CT3AG APTMC120HR11CT3AG C rev 0 july, 2015 www.microsemi.com 5-11 4. temperature sensor ntc symbol characteristic min typ max unit r 25 resistance @ 25c 22 k r 25 /r 25 resistance tolerance 5 % b/b beta tolerance 3 b 25/100 t 25 = 298.16 k 3980 k ? ?? ? ? ?? ? ? ?? ? ? ?? ? ? = t t b r r t 1 1 exp 25 100/25 25 5. thermal and package characteristics symbol characteristic min max unit v isol rms isolation voltage, any terminal to case t =1 min, 50/60hz 4000 v t j operating junction temperature range sic mosfet -40 150 c sic diodes + igbt -40 175 t jop recommended junction temperature under switching conditions -40 t j max -25 t stg storage temperature range -40 125 t c operating case temperature -40 125 torque mounting torque to heatsink m4 2 3 n.m wt package weight 110 g package outline (dimensions in mm) see application note 1906 - mounting instructions for sp3f power modules on www.microsemi.com t: thermistor temperature r t : thermistor value at t downloaded from: http:///
APTMC120HR11CT3AG APTMC120HR11CT3AG C rev 0 july, 2015 www.microsemi.com 6-11 6. typical performance curve q1, q2 sic mosfet v gs =16v v gs =18v v gs =20v 0 5 10 15 20 25 30 35 40 012345 i ds , drain source current (a) v ds , drain source voltage (v) output characteristics t j =25c v gs =20v v gs =16v v gs =18v 0 5 10 15 20 25 30 35 40 0123456789 i ds , drain source current (a) v ds , drain source voltage (v) output characteristics t j =150c 0.75 1 1.25 1.5 1.75 2 25 50 75 100 125 150 t j , junction temperature (c) norm alized r ds(on) vs. tem perature r dson , drain source on resistance v gs =20v i d =20a t j =25c t j =150c 0 5 10 15 20 25 30 35 40 24681 01 2 i ds , drain source current (a) v gs , gate source voltage (v) transfert characteristics d = 0.9 0.7 0.5 0.3 0.1 0.05 single pulse 0 0.2 0.4 0.6 0.8 1 1.2 0.00001 0.0001 0.001 0.01 0.1 1 10 the r mal im pedance (c/w) rectangular pulse duration (seconds) maxim um effective transient thermal im pedance, junction to case vs pulse duration eon eof f 0.00 0.25 0.50 0.75 1.00 0 5 10 15 20 25 30 35 40 sw itching energy (m j) drain current (a) inductive switching energy vs current v gs =-5/20v r g = 50 ? v bus = 600v t j = 150c eon eof f 0.1 0.2 0.3 0.4 0.5 50 55 60 65 70 75 80 85 90 95 100 sw itching energy (m j) gate resistance (ohms) inductive switching energy vs rg v gs =-5/20v i d = 20a v bus = 600v t j = 150c downloaded from: http:///
APTMC120HR11CT3AG APTMC120HR11CT3AG C rev 0 july, 2015 www.microsemi.com 7-11 cis s crss coss 1 10 100 1000 10000 0 200 400 600 800 1000 c, capacitance (pf) v ds , drain source voltage (v) capacitance vs drain source voltage 0 4 8 12 16 20 0 1020304050 v gs , gate source voltage (v) gate charge (nc) gate charge vs gate source voltage t j = 25c i d = 20a v ds = 800v zcs hard switching zvs 0 100 200 300 400 500 600 5 1015202530 frequency (khz) i d , drain current (a) operating frequency vs drain current v bus =600v d=50% r g =50 ? t j =150c t c =75c v gs =0v v gs =5v v gs =15v v gs =20v -40 -35 -30 -25 -20 -15 -10 -5 0 -4.5 -4 -3.5 -3 -2.5 -2 -1.5 -1 -0.5 0 i ds , drain source current (a) v ds , drain source voltage (v) 3rd quadrant characteristics t j =25c v gs =-2v v gs =0v v gs =-5v -40 -35 -30 -25 -20 -15 -10 -5 0 -4.5 -4 -3.5 -3 -2.5 -2 -1.5 -1 -0.5 i ds , drain source current (a) v ds , drain source voltage (v) body diode characteristics t j =25c v gs =-2v v gs =0v v gs =-5v -40 -35 -30 -25 -20 -15 -10 -5 0 -4 -3.5 -3 -2.5 -2 -1.5 -1 -0.5 i ds , drain source current (a) v ds , drain source voltage (v) body diode characteristics t j =150c v gs =0v v gs =5v v gs =15v v gs =20v -40 -35 -30 -25 -20 -15 -10 -5 0 -4 -3.5 -3 -2.5 -2 -1.5 -1 -0.5 0 i ds , drain source current (a) v ds , drain source voltage (v) 3rd quadrant characteristics t j =150c downloaded from: http:///
APTMC120HR11CT3AG APTMC120HR11CT3AG C rev 0 july, 2015 www.microsemi.com 8-11 cr1 & cr2 sic diode characteristics d = 0.9 0.7 0.5 0.3 0.1 0.05 single pulse 0 0.2 0.4 0.6 0.8 1 1.2 0.00001 0.0001 0.001 0.01 0.1 1 10 thermal impedance ( c/w) rectangular pulse duration (seconds) maxim um effective transient thermal im pedance, junction to case vs pu lse duration t j =25c t j =125c t j =175c 0 5 10 15 20 0 0.5 1 1.5 2 2.5 3 3.5 4 i f for w ar d cur rent (a) v f forw ard voltage (v) forw ard characteristics t j =25c t j =125c t j =175c 0 50 100 150 200 250 300 350 400 400 600 800 1000 1200 1400 i r reverse current (a) v r reverse voltage (v) reverse characteristics 0 100 200 300 400 500 600 700 1 10 100 1000 c, capacitance (pf) v r reverse voltage capacitance vs.reverse voltage downloaded from: http:///
APTMC120HR11CT3AG APTMC120HR11CT3AG C rev 0 july, 2015 www.microsemi.com 9-11 q3, q4 trench + field stop igbt3 t j =25c t j =150c 0 5 10 15 20 25 30 35 40 0 0.5 1 1.5 2 2.5 3 i c (a) v ce (v) output characteristics (v ge =15v) v ge =15v v ge =13v v ge =19v v ge =9v 0 5 10 15 20 25 30 35 40 00.511.522.533.5 i c (a) v ce (v) output characteristics t j = 150c t j =25c t j =150c 0 5 10 15 20 25 30 35 40 56789101112 i c (a) v ge (v) transfert characteristics eon eof f 0 0.25 0.5 0.75 1 1.25 0 1 02 03 04 0 e ( m j ) i c (a) energy losses vs collector current v ce = 300v v ge = 15v r g = 12 ? t j = 150c eon eon eof f 0 0.5 1 1.5 10 30 50 70 e ( m j ) gate resistance (ohms) v ce = 300v v ge =15v i c = 20a t j = 150c sw itching energy losses vs gate resistance 0 10 20 30 40 50 0 100 200 300 400 500 600 700 i c (a) v ce (v) reverse bias safe operating area v ge =15v t j =150c r g =12 ? d = 0.9 0.7 0.5 0.3 0.1 0.05 single pulse 0 0.4 0.8 1.2 1.6 2 0.00001 0.0001 0.001 0.01 0.1 1 10 the r mal im pedance ( c/w) rectangular pulse duration in seconds m axim um effective transient thermal impedance, junction to case vs pulse duratio n downloaded from: http:///
APTMC120HR11CT3AG APTMC120HR11CT3AG C rev 0 july, 2015 www.microsemi.com 10 - 11 cr3 & cr4 sic diode characteristics 0.9 0.7 0.5 0.3 0.1 0.05 single pulse 0 0.5 1 1.5 2 2.5 0.00001 0.0001 0.001 0.01 0.1 1 10 thermal impedance (c/w) rectangular pulse duration (seconds) maxim um effective transient thermal im pedance, junction to case vs pu lse duration t j =25c t j =75c t j =125c t j =175c 0 5 10 15 20 0 0.5 1 1.5 2 2.5 3 3.5 i f for w ar d cur rent (a) v f forw ard voltage (v) forw ard characteristics t j =25c t j =75c t j =125c t j =175c 0 40 80 120 160 200 200 300 400 500 600 700 800 i r reverse current (a) v r reverse voltage (v) reverse characteristics 0 50 100 150 200 250 300 350 400 1 10 100 1000 c, capacitance (pf) v r reverse voltage capacitance vs.reverse voltage downloaded from: http:///
APTMC120HR11CT3AG APTMC120HR11CT3AG C rev 0 july, 2015 www.microsemi.com 11 - 11 disclaimer the information contained in the document (unless it is publicly available on the web without access restrictions) is proprietary and confidential information of microsemi and cannot be copied, published, uploaded, posted, transmitted, distributed or disclosed or used without the express duly signed written consent of microsemi. if the recipient of this document has entered into a disclosure agreement with microsemi, then the ter ms of such agreement will also apply. this document and the information contained herein may not be modified, by any person other than authorized personnel of microsemi. no license under any patent, copyright, trade secret or other intellectual property right is granted to or conferred upon you by disclosure or delivery of the information, either expressly, by implication , inducement, estoppels or otherwise. any license under such intellectual property rights must be approved by microsemi in writing signed by an officer of microsemi. microsemi reserves the right to change the configuration, functionality and performance of its products at anytime without any notice. this product has been subject to limited testing and should not be used in conjunction with li fe- support or other mission-critical equipment or applications. microsemi assumes no liability whatsoever, and microsemi disclaims any express or implied warranty, relating to sale and/or use of microsemi products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright or other intellectual property right. any performance specifications believed to be reliable but are not verified and customer or user must conduct and complete all performance and other testing of this product as well as any user or custo mers final application. user or customer shall not rely on any data and performance specifications or parameters provided by microsemi. it is the customers and users responsibility to independently determine suitability of any microsemi product and to test and verify the same. the information contained herein is provided as is, where is and with all faults, and the entire risk associated with such information is entirely with the user. microsemi specifically disclai ms any liability of any kind including for consequential, incidental and punitive damages as well as lost profit. the product is subject to other terms and conditions which can be located on the web at http://www.microsemi.com/legal/tnc.asp life support application seller's products are not designed, intended, or authorized for use as components in systems intended for space, aviation, surgical implant into the body, in other applications intended to support or sustain life, or for any other application in which the failure of the seller's product could create a situation where personal injury, death or property damage or loss may occur (collectively "life support applications"). buyer agrees not to use products in any life support applications and to the extent it does it shall conduct extensive testing of the product in such applications and further agrees to indemnify and hold seller, and its officers, employees, subsidiaries, affiliates, agents, sales representatives and distributors harmless against all claims, costs, dam ages and expenses, and attorneys' fees and costs arising, directly or directly, out of any claims of personal injury, death, damage or otherwise associated with the use of the goods in life support applications, even if such claim includes allegations that seller was negligent regarding the design or manufacture of the goods. buyer must notify seller in writing before using sellers products in life support applications. seller will study with buyer alternative solutions to meet buyer application specification based on sellers sales conditions applicable for the new proposed specific part. downloaded from: http:///

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